550V 23A N-channel Power MOSFET LSB55R140GF

550V N-Channel MOSFET  Power MOSFET LSB55R140GF For Industrial Control   Description LonFET™ Power MOSFETs utilize advanced super junction technology to achieve extremely low on-resistance. This design optimizes them for applications demanding high power density and efficiency.   Features  Ultra-low RDS(on)  Minimal gate charge (typ. Qg = 40nC)  Full UIS testing  RoHS compliance   Applications  Power factor correction (PFC)  Switched-mode power supplies (SMPS)  Uninterruptible power supplies (UPS), etc.     Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 550 V Continuous drain current   ( TC  = 25°C ) ( TC = 100°C ) ID 23 14.5 A A Pulsed drain current 1) IDM 69 A Gate-Source voltage VGSS ±30 V Avalanche energy, single pulse 2) EAS 600 mJ Power Dissipation PD 208 W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Continuous diode forward curren…