High Performance N-channel 650V 20A Power MOSFET LSD65R180GT

650V High Voltage N-Channel MOSFET   Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.   Product Summary VDS @ Tj,max :  700V RDS(on),max :   0.18Ω IDM :                     60A Qg,typ :           40.2 nC   Features ⚫ Ultra low RDS(on) ⚫ Ultra low gate charge (typ. Qg= 40.2nC) ⚫ 100% UIS tested ⚫ RoHS compliant   Applications ⚫   Motor Drive ⚫ Power factor correction (PFC). ⚫ Switched mode power supplies (SMPS). ⚫ Uninterruptible power supply (UPS).       Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 650 V Continuous drain current 1)             ( TC  = 25°C ) ( TC = 100°C ) ID   20 12.6   A A Pulsed drain current 2) IDM 60 A Gate-Source voltage VGSS ±30 V Avalanche energy, single pulse…