RF MOSFET Transistors BLC10G27XS-400AVTZ

Power LDMOS Transistor Model: BLC10G27XS-400AVT (Standard Model: BLC10G27XS-400AVTZ, Tape & Reel Packaging)   Manufacturer: Ampleon   Product Type: 9th Generation 28V LDMOS Packaged Asymmetric Doherty RF Power Transistor (Optimized for 2.496–2.69 GHz Base Station Multi-Carrier Applications)   Key Specifications Parameter Specification Frequency Range 2496 MHz to 2690 MHz (2.496–2.69 GHz), covering 5G NR n78/n79 and other key bands Peak Output Power (P1dB) 400 W (Continuous Wave, CW mode), typical 46.0 dBm Typical Power Gain 13.3 dB (Typical, in Doherty Configuration) Typical Drain Efficiency 50%+ (Doherty Configuration, Optimized DPD Performance) Supply Voltage (VDS) 28 V (Standard), Maximum Rated Voltage 65 V Quiescent Drain Current (IDq) 200 mA (Typical) Package Type SOT1258-4 (OMP-780-4F-1), 6-lead air cavity plastic earless flanged package, enhanced thermal dissipation Special Features Asymmetric Doherty architecture, integrated ESD protection, low outp…