Semiconductor Discrete Devices -- IGBT Single Tube General Description: Engineered with NCE’s proprietary Trench-Gate Field Stop (TFS) architecture and second-generation Field Stop (FS II) technology, the 600V Trench FS II IGBT series delivers industry-leading conduction efficiency, ultra-fast switching performance, and simplified parallel configuration for high-power applications. Key Features ⚫ Trench FSII Technology offering ⚫ Ultra-low on-state voltage (VCE(sat) typ. 1.2V) ⚫ High-frequency switching capability (fSW up to 100kHz) ⚫ Positive temperature coefficient in VCE(sat) ⚫ Tight parameter distribution for enhanced module design ⚫ Rugged avalanche performance with temperature-compensated switching behavior Typical Application ⚫ Air Condition ⚫ Inverters ⚫ Motor drives IGBT Single Tube (or Discrete IGBT)A power semiconductor device that packages a single IGBT chip (often with a freewheeling diode) in an isolated housing. Key characteristics: Contains only…
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